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IEICE Trans

Keyword : AlInAs/InGaAs

A Super Low Noise AlInAs/InGaAs HEMT Fabricated by Selective Gate Recess Etching
Naohito YOSHIDA Toshiaki KITANO Yoshitsugu YAMAMOTO Takayuki KATOH Hiroyuki MINAMI Takuo KASHIWA Takuji SONODA Hirozo TAKANO Osamu ISHIHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/09/25
Vol. E78-C  No. 9 ; pp. 1279-1285
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
HEMT, AlInAs/InGaAs, InP, low-noise, selectiverecess, 
 Summary | Full Text:PDF