Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2005/04/01 Vol. E88-CNo. 4 ;
pp. 683-689 Type of Manuscript: Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices) Category: Compound Semiconductor Devices Keyword: device simulation, open-gated FET, AlGaN/GaN heterostructure, trap, surface state, interface state,