Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2022/10/01
Vol. E105-C
No. 10 ;
pp. 457-465
Type of Manuscript:
INVITED PAPER (Special Section on Microwave and Millimeter-Wave Technologies)
Category: Keyword: AlGaN/GaN, high electron mobility transistor (HEMT), GaN-on-Si, 3C-SiC intermediate layer, microwave amplifier, |