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IEICE Trans

Keyword : 1T-DRAM

Impact of Floating Body Type DRAM with the Vertical MOSFET
Yuto NORIFUSA Tetsuo ENDOH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/05/01
Vol. E94-C  No. 5 ; pp. 705-711
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
floating body type DRAM, 1T-DRAM, memory architecture, vertical MOSFET, 3D structured device, LSI, 
 Summary | Full Text:PDF