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IEICE Trans

Keyword : process-variation-tolerant

STT-MRAM Operating at 0.38V Using Negative-Resistance Sense Amplifier
Yohei UMEKI Koji YANAGIDA Shusuke YOSHIMOTO Shintaro IZUMI Masahiko YOSHIMOTO Hiroshi KAWAGUCHI Koji TSUNODA Toshihiro SUGII 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 2014/12/01
Vol. E97-A  No. 12 ; pp. 2411-2417
Type of Manuscript:  Special Section PAPER (Special Section on VLSI Design and CAD Algorithms)
Category: Circuit Design
Keyword: 
STT-MRAM, low-voltage, process-variation-tolerant, 
 Summary | Full Text:PDF