Non-Isothermal Device Simulation of Gate Switching and Drain Breakdown Characteristics of Si MOSFET in Transient State Hirobumi KAWASHIMARyo DANG (or DAN)
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1999/06/25 Vol. E82-CNo. 6 ;
pp. 894-899 Type of Manuscript: Special Section PAPER (Special Issue on TCAD for Semiconductor Industries) Category: Keyword: device simulation, non-isothermal, Si MOSFET, transient state, breakdown,
Non-isothermal Device Simulation Taking Account of Transistor Self-Heating and In-Chip Thermal Interdependence Hirobumi KAWASHIMARyo DANG
Publication: IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences Publication Date: 1997/10/25 Vol. E80-ANo. 10 ;
pp. 1973-1978 Type of Manuscript: Special Section PAPER (Special Section on VLSI Design and CAD Algorithms) Category: Keyword: device simulation, non-isothermal, heat flow, self-heating, Si MOSFET, negative resistance,