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IEICE Trans

Yusuke IKAWA

2D Device Simulation of AlGaN/GaN HFET Current Collapse Caused by Surface Negative Charge Injection
Yusuke IKAWA Yorihide YUASA Cheng-Yu HU Jin-Ping AO Yasuo OHNO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/08/01
Vol. E93-C  No. 8  pp. 1218-1224
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2009)
Category: GaN-based Devices
Keyword: 
AlGaN/GaN HFET, collapse, virtual gate, pinning, surface states, simulation, 
 Summary | Full Text:PDF