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IEICE Trans

Yugang ZHOU

Enhancement-Mode AlGaN/GaN HEMTs with Low On-Resistance and Low Knee-Voltage
Yong CAI Yugang ZHOU Kei May LAU Kevin J. CHEN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7  pp. 1025-1030
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: GaN-Based Devices
Keyword: 
enhancement mode, AlGaN/GaN, HEMT, fluoride, plasma treatment, threshold voltage, 
 Summary | Full Text:PDF