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IEICE Trans

Yoshio HASHIMOTO

Heavy p- and n-type Doping with Si on (311)A GaAs Substrates by Molecular Beam Epitaxy
Kenichi AGAWA Yoshio HASHIMOTO Kazuhiko HIRAKAWA Noriaki SAKAMOTO Toshiaki IKOMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/09/25
Vol. E77-C  No. 9  pp. 1408-1413
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Devices and Epitaxial Growth Techniques)
Category: 
Keyword: 
molecular beam epitaxy, (311)A GaAs substrates, Si dopant, δ-doping, conduction-type control, 
 Summary | Full Text:PDF