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IEICE Trans

Yoshihiro TAKAISHI

Measuring Contact Resistance of a Poly-Silicon Plug on a Lightly Doped Single-Diffusion Region in DRAM Cells
Naoki KASAI Hiroki KOGA Yoshihiro TAKAISHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/05/01
Vol. E85-C  No. 5  pp. 1146-1150
Type of Manuscript:  Special Section PAPER (Special Issue on Microelectronic Test Structures)
Category: 
Keyword: 
test structure, contact resistance, poly-silicon plug, DRAM cell, 
 Summary | Full Text:PDF