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IEICE Trans

Yongho OH

The Effect of Device Layout Schemes on RF Performance of Multi-Finger MOSFETs
Yongho OH Jae-Sung RIEH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/05/01
Vol. E95-C  No. 5  pp. 785-791
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
fT, fmax, gate resistance, layout, RF MOSFET, 
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