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IEICE Trans

Yeonbae CHUNG

A 2-Mb 1T1C FeRAM Prototype Based on PMOS-Gating Cell Structure
Yeonbae CHUNG Jung-Hyun KIM Jae-Eun YOON 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/10/01
Vol. E87-C  No. 10  pp. 1686-1693
Type of Manuscript:  Special Section PAPER (Special Section on New Era of Nonvolatile Memories)
Category: Ferroelectric Memory
Keyword: 
FeRAM, memory, nonvolatile, ferroelectrics, 
 Summary | Full Text:PDF