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IEICE Trans

Vipan KUMAR

High Performance Recessed Gate AlGaN/GaN HEMTs on Sapphire
Ilesanmi ADESIDA Vipan KUMAR Jinwei YANG Muhammed Asif KHAN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10  pp. 1955-1959
Type of Manuscript:  INVITED PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
GaN, HEMTs, sapphire, 
 Summary | Full Text:PDF