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IEICE Trans

Vikas RANA

High Performance P-Channel Single-Crystalline Si TFTs Fabricated Inside a Location-Controlled Grain by µ-Czochralski Process
Vikas RANA Ryoichi ISHIHARA Yasushi HIROSHIMA Daisuke ABE Satoshi INOUE Tatsuya SHIMODA Wim METSELAAR Kees BEENAKKER 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/11/01
Vol. E87-C  No. 11  pp. 1943-1947
Type of Manuscript:  INVITED PAPER (Special Section on Electronic Displays)
Category: 
Keyword: 
excimer-laser, µ-Czochralski process, single-crystalline Si TFT, subthreshold slope, 
 Summary | Full Text:PDF