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IEICE Trans

Tsutomu UESUGI

Temperature Characteristics of Lateral Power MOS FET Formed by Solid Phase Epitaxy
Masahito KODAMA Tsutomu UESUGI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/09/25
Vol. E81-C  No. 9  pp. 1505-1507
Type of Manuscript:  LETTER
Category: Semiconductor Materials and Devices
Keyword: 
power MOS FET, LATERAL, SPE, SOI, temperature characteristic, 
 Summary | Full Text:PDF