IEICE Trans

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IEICE Trans

Toyoji YAMAMOTO

Suppression of Charges in Al₂O₃ Gate Dielectric and Improvement of MOSFET Performance by Plasma Nitridation Kenzo MANABE Kazuhiko ENDO Satoshi KAMIYAMA Toshiyuki IWAMOTO Takashi OGURA Nobuyuki IKARASHI Toyoji YAMAMOTO Toru TATSUMI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2004/01/01 Vol. E87-C No. 1 pp. 30-36 Type of Manuscript: Special Section PAPER (Special Section on High-κ Gate Dielectrics) Category: Keyword: high-κ gate dielectric, aluminum oxide, plasma nitridation, fixed charge, MOSFET performance,
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0.15 µm CMOS Devices with Reduced Junction Capacitance Akira TANABE Kiyoshi TAKEUCHI Toyoji YAMAMOTO Takeo MATSUKI Takemitsu KUNIO Masao FUKUMA Ken NAKAJIMA Naoki AIZAKI Hidenobu MIYAMOTO Eiji IKAWA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1995/03/25 Vol. E78-C No. 3 pp. 267-273 Type of Manuscript: Special Section PAPER (Special Issue on Sub-1/4 Micron Device and Process Technologies) Category: Keyword: CMOS, EB lithography, Ti salicide, SPICE,
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