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IEICE Trans

Tomoya SUGAHARA

Role of Dislocation in InGaN/GaN Quantum Wells Grown on Bulk GaN and Sapphire Substrates Tomoya SUGAHARA Shiro SAKAI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2000/04/25 Vol. E83-C No. 4 pp. 598-604 Type of Manuscript: INVITED PAPER (Special Issue on Blue Laser Diodes and Related Devices/Technologies) Category: Keyword: dislocation, homoepitaxy, heteroepitaxy, nonradiative recombination center, phase separation, band-tail states,
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Optical Properties of Bound Excitons and Biexcitons in GaN Yoichi YAMADA Chiharu SASAKI Yohei YOSHIDA Satoshi KURAI Tsunemasa TAGUCHI Tomoya SUGAHARA Katsushi NISHINO Shiro SAKAI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2000/04/25 Vol. E83-C No. 4 pp. 605-611 Type of Manuscript: INVITED PAPER (Special Issue on Blue Laser Diodes and Related Devices/Technologies) Category: Keyword: bound exciton, biexciton, Zeeman splitting, diamagnetic shift, time-resolved luminescence,
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