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IEICE Trans

Thomas KLAUSER

Evaluation of the Point Defect Bulk Recombination Rate by Ion Implantation at High Temperatures
Peter PICHLER Rainer SCHORK Thomas KLAUSER Heiner RYSSEL 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/02/25
Vol. E75-C  No. 2  pp. 128-137
Type of Manuscript:  Special Section PAPER (Special Issue on Selected Papers from '91 VPAD)
Category: 
Keyword: 
boron, antimony, diffusion, point defects, implantation enhancement, 
 Summary | Full Text:PDF