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IEICE Trans

Tengyue YI

Simulation Study and SPICE Modeling of Single-Event Transients Induced by Secondary Ions Not Incident to the Drain in Nanoscale CMOS Technology
Hao WU Guanghui SHI Gang JIN Tengyue YI Yiqi ZHUANG 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2026/07/01
Vol. E109-C  No. 7  pp. 257-266
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
single event transient, single event effect, neutron, secondary ion, TCAD, 
 Summary | Full Text:PDF