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IEICE Trans

Taroh INADA

Shallow p-Type Layers in Si by Rapid Vapor-Phase Doping for High-Speed Bipolar and MOS Applications
Yukihiro KIYOTA Tohru NAKAMURA Seiji SUZUKI Taroh INADA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/04/25
Vol. E79-C  No. 4  pp. 554-559
Type of Manuscript:  Special Section PAPER (Special Issue on Ultra-High-Speed LSIs)
Category: 
Keyword: 
RVD, shallow-junction bipolar, MOS, 
 Summary | Full Text:PDF
Subquarter-Micrometer PMOSFET's with 50-nm Source and Drain Formed by Rapid Vapor-Phase Doping (RVD)
Yukihiro KIYOTA Tohru NAKAMURA Taroh INADA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/03/25
Vol. E77-C  No. 3  pp. 362-366
Type of Manuscript:  Special Section PAPER (Special Issue on Quarter Micron Si Device and Process Technologies)
Category: Device Technology
Keyword: 
PMOSFET, RVD, shallow-junction, 
 Summary | Full Text:PDF