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IEICE Trans

Takeshi SAGAI

Fabrication of InP/InGaAs SHBT on Si Substrate by Using Transferred Substrate Process
Yutaro YAMAGUCHI Takeshi SAGAI Yasuyuki MIYAMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/08/01
Vol. E95-C  No. 8  pp. 1323-1326
Type of Manuscript:  BRIEF PAPER
Category: III-V High-Speed Devices and Circuits
Keyword: 
heterojunction bipolar transistor, InP, base-collector capacitance, transferred-substrate, heterogeneous integration, 
 Summary | Full Text:PDF