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IEICE Trans

Takemitsu KUNIO

Uniform Raised-Salicide Technology for High-Performance CMOS Devices
Hitoshi WAKABAYASHI Takeshi ANDOH Tohru MOGAMI Toru TATSUMI Takemitsu KUNIO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/05/01
Vol. E85-C  No. 5  pp. 1104-1110
Type of Manuscript:  Special Section PAPER (Special Issue on Advanced Sub-0.1 µm CMOS Devices)
Category: 
Keyword: 
complementary metal oxide semiconductor, salicide, raised salicide, silicon selective epitaxial growth, pit, 
 Summary | Full Text:PDF
0.15 µm CMOS Devices with Reduced Junction Capacitance
Akira TANABE Kiyoshi TAKEUCHI Toyoji YAMAMOTO Takeo MATSUKI Takemitsu KUNIO Masao FUKUMA Ken NAKAJIMA Naoki AIZAKI Hidenobu MIYAMOTO Eiji IKAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/03/25
Vol. E78-C  No. 3  pp. 267-273
Type of Manuscript:  Special Section PAPER (Special Issue on Sub-1/4 Micron Device and Process Technologies)
Category: 
Keyword: 
CMOS, EB lithography, Ti salicide, SPICE, 
 Summary | Full Text:PDF
TiN as a Phosphorus Outdiffusion Barrier Layer for WSix/Doped-Polysilicon Structures
John M. DRYNAN Hiromitsu HADA Takemitsu KUNIO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/04/25
Vol. E76-C  No. 4  pp. 613-625
Type of Manuscript:  Special Section PAPER (Special Issue on Sub-Half Micron Si Device and Process Technologies)
Category: Process Technology
Keyword: 
barrier, outdiffusion, phosphorus, polysilicon, titanium nitride, tungsten silicide, 
 Summary | Full Text:PDF