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IEICE Trans

Takayuki AOYAMA

Electrical Properties of SiN/HfO2/SiON Gate Stacks with High Thermal Stability
Yusuke MORISAKI Takayuki AOYAMA Yoshihiro SUGITA Kiyoshi IRINO Toshihiro SUGII Tomoji NAKAMURA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/01/01
Vol. E87-C  No. 1  pp. 37-43
Type of Manuscript:  Special Section PAPER (Special Section on High-κ Gate Dielectrics)
Category: 
Keyword: 
high-κ, HfO2, gate dielectric, thermal stability, 
 Summary | Full Text:PDF