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IEICE Trans

Takashi SUEMASU

One Possibility of Obtaining Bulk GaN: Halide VPE Growth at 1000 on GaAs (111) Substrates
Fumio HASEGAWA Masato MINAMI  Takashi SUEMASU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/04/25
Vol. E83-C  No. 4  pp. 633-638
Type of Manuscript:  INVITED PAPER (Special Issue on Blue Laser Diodes and Related Devices/Technologies)
Category: 
Keyword: 
GaN, HVPE, GaAs substrate, thick GaN layer, 
 Summary | Full Text:PDF
Different Characteristics of Metal (CoSi2)/Insulator (CaF2) Resonant Tunneling Transistors Depending on Base Quantum-Well Layer
Takashi SUEMASU Yoshifumi KOHNO Nobuhiro SUZUKI Masahiro WATANABE Masahiro ASADA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/09/25
Vol. E77-C  No. 9  pp. 1450-1454
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Devices and Epitaxial Growth Techniques)
Category: 
Keyword: 
resonant tunneling transistor, metal-insulator heterostructure, CaF2, CoSi2, transfer efficiency, 
 Summary | Full Text:PDF