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IEICE Trans

Shunro FUKE

Influence of PH3 Preflow Time on Initial Growth of GaP on Si Substrates by Metalorganic Vapor Phase Epitaxy
Yasushi TAKANO Takuya OKAMOTO Tatsuya TAKAGI Shunro FUKE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2009/12/01
Vol. E92-C  No. 12  pp. 1443-1448
Type of Manuscript:  Special Section PAPER (Special Section on Nanomaterials and Nanodevices for Nanoscience and Nanotechnology)
Category: Nanomaterials and Nanostructures
Keyword: 
defects, growth models, GaP on Si, metalorganic vapor phase epitaxy, semiconducting III-V compounds, 
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