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IEICE Trans

Shunich MUTO

Selective Growth of GaAs by Pulsed-Jet Epitaxy
Yoshiki SAKUMA Shunich MUTO Naoki YOKOYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/09/25
Vol. E77-C  No. 9  pp. 1414-1419
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Devices and Epitaxial Growth Techniques)
Category: 
Keyword: 
selective epitaxy, atomic layer epitaxy (ALE), MOVPE, pulsed-jet epitaxy, GaAs, SiO2 mask, 
 Summary | Full Text:PDF