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IEICE Trans

Shinya OOTOMO

Gate Leakage in AlGaN/GaN Heterostructure Field Effect Transistors and Its Suppression by Novel Al2O3 Insulated Gate
Shinya OOTOMO Hideki HASEGAWA Tamotsu HASHIZUME 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10  pp. 2043-2050
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
GaN, AlGaN, leakage current, surface states, passivation, 
 Summary | Full Text:PDF