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IEICE Trans

Shintaro SATO

Simulation Study of Short-Channel Effect in MOSFET with Two-Dimensional Materials Channel
Naoki HARADA Shintaro SATO Naoki YOKOYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2015/03/01
Vol. E98-C  No. 3  pp. 283-286
Type of Manuscript:  BRIEF PAPER
Category: Semiconductor Materials and Devices
Keyword: 
MOSFET, transition metal dichalcogenide, short-channel effects, device simulation, high-k dielectric, 
 Summary | Full Text:PDF