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IEICE Trans

Shinsuke ISHIMARU

Current-Voltage Hysteresis Characteristics in MOS Capacitors with Si-Implanted Oxide
Toshihiro MATSUDA Shinsuke ISHIMARU Shingo NOHARA Hideyuki IWATA Kiyotaka KOMOKU Takayuki MORISHITA Takashi OHZONE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2009/12/01
Vol. E92-C  No. 12  pp. 1523-1530
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
MOS capacitors, Si-implantation, thermal oxide, I-V hysteresis, hysteresis window, nonvolatile memory, 
 Summary | Full Text:PDF