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IEICE Trans

Shinich HOSHI

Effects of a Thermal CVD SiN Passivation Film on AlGaN/GaN HEMTs
Toshiharu MARUI Shinich HOSHI Masanori ITOH Isao TAMAI Fumihiko TODA Hideyuki OKITA Yoshiaki SANO Shohei SEKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/07/01
Vol. E91-C  No. 7  pp. 1009-1014
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007)
Category: GaN Process Technology
Keyword: 
AlGaN/GaN HEMTs, thermal CVD SiN, current collapse, passivation film, gate insulator, 
 Summary | Full Text:PDF