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IEICE Trans

Shin ISHIMATSU

In-Situ N2-Plasma Nitridation for High-k HfN Gate Insulator Formed by Electron Cyclotron Resonance Plasma Sputtering
Shun-ichiro OHMI Shin ISHIMATSU Yuske HORIUCHI Sohya KUDOH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2020/06/01
Vol. E103-C  No. 6  pp. 299-303
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Semiconductor Materials and Devices
Keyword: 
high-k, gate insulator, interfacial layer, nitridation, N2-plasma, ECR, HfN, 
 Summary | Full Text:PDF