Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2012/08/01
Vol. E95-C
No. 8
pp. 1332-1336
Type of Manuscript:
Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2011) Category: GaN-based Devices Keyword: AlGaN channel, high temperature, HEMT, |