Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1994/02/25 Vol. E77-CNo. 2pp. 129-133 Type of Manuscript: Special Section PAPER (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD 93)) Category: Process Simulation Keyword: process simulation, model for silicide growth, SALICIDE, silicidation, titanium disilicide, MOSFET,