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IEICE Trans

Sergey SMIRNOV

Investigation of the Electron Mobility in Strained Si1-xGex at High Ge Composition
Sergey SMIRNOV Hans KOSINA Siegfried SELBERHERR 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/03/01
Vol. E86-C  No. 3  pp. 350-356
Type of Manuscript:  Special Section PAPER (Special Issue on the 2002 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'02))
Category: 
Keyword: 
Monte Carlo simulation, strained SiGe, low field electron mobility, doping and strain effects, 
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