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IEICE Trans

Seikoh YOSHIDA

Low On-Voltage Operation AlGaN/GaN Schottky Barrier Diode with a Dual Schottky Structure
Seikoh YOSHIDA Nariaki IKEDA Jiang LI Takahiro WADA Hironari TAKEHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/04/01
Vol. E88-C  No. 4  pp. 690-693
Type of Manuscript:  Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices)
Category: Power Devices
Keyword: 
GaN, AlGaN, Schottky, SBD, on-voltage, 
 Summary | Full Text:PDF