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IEICE Trans

Scott ROY

RF Analysis Methodology for Si and SiGe FETs Based on Transient Monte Carlo Simulation
Scott ROY Sava KAYA Asen ASENOV John R. BARKER 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/08/25
Vol. E83-C  No. 8  pp. 1224-1227
Type of Manuscript:  Special Section PAPER (Special Issue on 1999 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'99))
Category: Device Modeling and Simulation
Keyword: 
device simulation, Monte Carlo, MOSFETs, RF, 
 Summary | Full Text:PDF