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IEICE Trans

Satoshi SHIMONISHI

Self-Aligned Aluminum-Gate MOSFET's Having Ultra-Shallow Junctions Formed by 450 Furnace Annealing
Koji KOTANI Tadahiro OHMI Satoshi SHIMONISHI Tomohiro MIGITA Hideki KOMORI Tadashi SHIBATA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/04/25
Vol. E76-C  No. 4  pp. 541-547
Type of Manuscript:  Special Section PAPER (Special Issue on Sub-Half Micron Si Device and Process Technologies)
Category: Device Technology
Keyword: 
aluminum gate, self align, ultraclean ion-implantation, 450 furnace annealing, 
 Summary | Full Text:PDF