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IEICE Trans

Sanae ITO

Statistical Threshold Voltage Fluctuation Analysis by Monte Carlo Ion Implantation Method
Yoshinori ODA Yasuyuki OHKURA Kaina SUZUKI Sanae ITO Hirotaka AMAKAWA Kenji NISHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/03/01
Vol. E86-C  No. 3  pp. 416-420
Type of Manuscript:  Special Section PAPER (Special Issue on the 2002 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'02))
Category: 
Keyword: 
threshold voltage fluctuation, three dimensional simulation, statistical dopant variation, Monte Carlo method, 
 Summary | Full Text:PDF