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IEICE Trans

Ryo NAKAO


Heteroepitaxial Growth of GaAs/Ge Buffer Layer on Si for Metamorphic InGaAs Lasers
Ryo NAKAO Masakazu ARAI Takaaki KAKITSUKA Shinji MATSUO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2018/07/01
Vol. E101-C  No. 7  pp. 537-544
Type of Manuscript:  INVITED PAPER (Special Section on Distinguished Papers in Photonics)
Category: 
Keyword: 
heteroepitaxial growthGe bufferMOVPESi substrate
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