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IEICE Trans

Robert BASS

Sb-Based n- and p-Channel Heterostructure FETs for High-Speed, Low-Power Applications
J. Brad BOOS Brian R. BENNETT Nicolas A. PAPANICOLAOU Mario G. ANCONA James G. CHAMPLAIN Yeong-Chang CHOU Michael D. LANGE Jeffrey M. YANG Robert BASS Doewon PARK Ben V. SHANABROOK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/07/01
Vol. E91-C  No. 7  pp. 1050-1057
Type of Manuscript:  INVITED PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007)
Category: 
Keyword: 
HEMTs, HFETs, MMICs, InAs, InGaSb, 
 Summary | Full Text:PDF