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IEICE Trans

Norio HIRASHITA

A Site Specification Method of Gate Oxide Breakdown Spots by a New Test Structure of MOS Capacitors
Satoshi IKEDA Hidetsugu UCHIDA Norio HIRASHITA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/05/01
Vol. E85-C  No. 5  pp. 1134-1137
Type of Manuscript:  Special Section PAPER (Special Issue on Microelectronic Test Structures)
Category: 
Keyword: 
MOS capacitor, gate oxide, OBIC, breakdown spot, XTEM, 
 Summary | Full Text:PDF
The Effect of Chemical Cleaning on Bulk Traps in Dry Gate Oxide
Hidetsugu UCHIDA Norio HIRASHITA Tsuneo AJIOKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/07/25
Vol. E75-C  No. 7  pp. 790-795
Type of Manuscript:  Special Section PAPER (Special Issue on Ultra Clean Technology)
Category: 
Keyword: 
hole trap, electron trap, chemical cleaning, SiO2, avalanche injection, 
 Summary | Full Text:PDF