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IEICE Trans

Motoki FUKUSIMA

Characterization of Resistive Switching of Pt/Si-Rich Oxide/TiN System
Motoki FUKUSIMA Akio OHTA Katsunori MAKIHARA Seiichi MIYAZAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2013/05/01
Vol. E96-C  No. 5  pp. 708-713
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
resistive random access memory (ReRAM), Si oxide, chemical bonding features, X-ray photoelectron spectroscopy, resistance switching property, 
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