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IEICE Trans

Morikazu TSUNO

A Study of Electrical Characteristics Improvements in Sub-0.1 µm Gate Length MOSFETs by Low Temperature Operation
Morikazu TSUNO Shin YOKOYAMA Kentaro SHIBAHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/12/25
Vol. E81-C  No. 12  pp. 1913-1917
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
MOSFET, low temperature, velocity overshoot, Sb, nonsteady-stationary effect, impact ionization, hot-carrier, 
 Summary | Full Text:PDF