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IEICE Trans

Min-Hwi KIM

Bias Polarity Dependent Resistive Switching Behaviors in Silicon Nitride-Based Memory Cell
Sungjun KIM Min-Hwi KIM Seongjae CHO Byung-Gook PARK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2016/05/01
Vol. E99-C  No. 5  pp. 547-550
Type of Manuscript:  BRIEF PAPER
Category: 
Keyword: 
resistive random-access memory (RRAM), silicon nitride (Si3N4), bias polarity, switching parameters, 
 Summary | Full Text:PDF
Resistive Switching Characteristics of Silicon Nitride-Based RRAM Depending on Top Electrode Metals
Sungjun KIM Sunghun JUNG Min-Hwi KIM Seongjae CHO Byung-Gook PARK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2015/05/01
Vol. E98-C  No. 5  pp. 429-433
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
RRAM, switching and conduction mechanism, top electrode (TE), 
 Summary | Full Text:PDF