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IEICE Trans

Min Gee KIM

The Evaluation of the Interface Properties of PdEr-Silicide on Si(100) Formed with TiN Encapsulating Layer and Dopant Segregation Process
Rengie Mark D. MAILIG Min Gee KIM Shun-ichiro OHMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2020/06/01
Vol. E103-C  No. 6  pp. 286-292
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Electronic Materials
Keyword: 
PdEr-silicide, TiN encapsulating layer, dopant segregation process, Schottky barrier height, 
 Summary | Full Text:PDF
Ferroelectric Gate Field-Effect Transistors with 10nm Thick Nondoped HfO2 Utilizing Pt Gate Electrodes
Min Gee KIM Masakazu KATAOKA Rengie Mark D. MAILIG Shun-ichiro OHMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2020/06/01
Vol. E103-C  No. 6  pp. 280-285
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Electronic Materials
Keyword: 
ferroelectrics, nondoped HfO2, MFSFET, nonvolatile memory, 
 Summary | Full Text:PDF
The Effect of PMA with TiN Gate Electrode on the Formation of Ferroelectric Undoped HfO2 Directly Deposited on Si(100)
Min Gee KIM Shun-ichiro OHMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2019/06/01
Vol. E102-C  No. 6  pp. 435-440
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
ferroelectric HfO2, undoped HfO2, post-metallization annealing, MFS diodes, 
 Summary | Full Text:PDF