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IEICE Trans

Mathieu STOFFEL

Epitaxial Growth of SiGe Interband Tunneling Diodes on Si(001) and on Si0.7Ge0.3 Virtual Substrates
Mathieu STOFFEL Jing ZHANG Oliver G. SCHMIDT 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7  pp. 921-925
Type of Manuscript:  INVITED PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: 
Keyword: 
SiGe, interband tunneling diodes, negative differential resistance, SiGe relaxed buffers, 
 Summary | Full Text:PDF