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IEICE Trans

Masatoshi MORIKAWA

Development of High Efficiency RF Power MOSFET for GSM Cellular Phone System Yuri KUSAKARI Masatoshi MORIKAWA Kazunori ONOZAWA Iwamichi KOHJIRO Isao YOSHIDA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2002/07/01 Vol. E85-C No. 7 pp. 1436-1442 Type of Manuscript: Special Section PAPER (Special Issue on Silicon RF Device & Integrated Circuit Technologies) Category: Keyword: GSM, RF power MOSFET, 0.45-µm LSI process, power-added efficiency,
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Estimations of Emitter Crowding Effect and Emitter Gummel Number of Amorphous SiC: H Emitter HBT Kimihiro SASAKI Masatoshi MORIKAWA Seijiro FURUKAWA
Publication: IEICE TRANSACTIONS (1976-1990) Publication Date: 1986/04/25 Vol. E69-E No. 4 pp. 241-242 Type of Manuscript: Special Section LETTER (Special Issue: Papers from 1986 National Convention IECE Japan) Category: Silicon Devices and Integrated Circuits Keyword:
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