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IEICE Trans

Masami HANE

Past and Future Technology for Mixed Signal LSI
Kenichi HATASAKO Tetsuya NITTA Masami HANE Shigeto MAEGAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2014/04/01
Vol. E97-C  No. 4  pp. 238-244
Type of Manuscript:  INVITED PAPER (Special Section on Solid-State Circuit Design,---,Architecture, Circuit, Device and Design Methodology)
Category: 
Keyword: 
Mixed Signal LSI, BiC-DMOS, analog, power IC, InGaZnO (IGZO), 
 Summary | Full Text:PDF
Source/Drain Optimization of Double Gate FinFET Considering GIDL for Low Standby Power Devices
Katsuhiko TANAKA Kiyoshi TAKEUCHI Masami HANE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/04/01
Vol. E90-C  No. 4  pp. 842-847
Type of Manuscript:  Special Section PAPER (Special Section on Low-Power, High-Speed LSIs and Related Technologies)
Category: Device
Keyword: 
FinFET, double gate, GIDL, device simulation, LSTP, 
 Summary | Full Text:PDF
Three Dimensional MOSFET Simulation for Analyzing Statistical Dopant-Induced Fluctuations Associated with Atomistic Process Simulator
Tatsuya EZAKI Takeo IKEZAWA Akio NOTSU Katsuhiko TANAKA Masami HANE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/03/01
Vol. E86-C  No. 3  pp. 409-415
Type of Manuscript:  INVITED PAPER (Special Issue on the 2002 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'02))
Category: 
Keyword: 
atomistic, fluctuation, process simulation, device simulation, 
 Summary | Full Text:PDF
Molecular Dynamics Calculation Studies of Interstitial-Si Diffusion and Arsenic Ion Implantation Damage
Masami HANE Takeo IKEZAWA Akio FURUKAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/08/25
Vol. E83-C  No. 8  pp. 1247-1252
Type of Manuscript:  Special Section PAPER (Special Issue on 1999 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'99))
Category: Process Modeling and Simulation
Keyword: 
interstitial-silicon, interstitial diffusivity, diffusion-constant, molecular dynamics, ion-implantation damage, 
 Summary | Full Text:PDF
Dynamic-Clustering and Grain-Growth Kinetics Effects on Dopant Diffusion in Polysilicon
Masami HANE Shinya HASEGAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/02/25
Vol. E77-C  No. 2  pp. 112-117
Type of Manuscript:  Special Section PAPER (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD 93))
Category: Process Simulation
Keyword: 
poly-silicon, diffusion, modeling, simulation, 
 Summary | Full Text:PDF