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IEICE Trans

Masaaki TERASAWA

A 3 Volt 1 Mbit Full-Featured EEPROM Using a Highly-Reliable MONOS Device Technology
Shin-ichi MINAMI Kazuaki UJIIE Masaaki TERASAWA Kazuhiro KOMORI Kazunori FURUSAWA Yoshiaki KAMIGAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/08/25
Vol. E77-C  No. 8  pp. 1260-1269
Type of Manuscript:  Special Section PAPER (Special Section on High Speed and High Density Multi Functional LSI Memories)
Category: Non-volatile Memory
Keyword: 
low-voltage operation, nonvoltatile semiconductor memory, EEPROM, MONOS device, 
 Summary | Full Text:PDF