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IEICE Trans

Masaaki ARAIDAI

Possibility of Metal-Oxide-Nitride-Oxide-Semiconductor Memories for Long Lifespan Archive Memories
Hiroki SHIRAKAWA Keita YAMAGUCHI Masaaki ARAIDAI Katsumasa KAMIYA Kenji SHIRAISHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2017/10/01
Vol. E100-C  No. 10  pp. 928-933
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
MONOS, archive memories, charge trap memories, first principals calculation, 
 Summary | Full Text:PDF